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Four material families,
covering the full power stack.

PRODUCTS
04 FAMILIES

Al₂O₃ 96%

FIG · 01

96 Alumina Substrate

Alumina · white

Cost-effective insulating substrate; versatile, fits thick-film circuits and general power packaging.

Thermal k ≥20 W/m·KBreakdown ≥15 kV/mm

AlN 170 / 230

FIG · 02

AlN Substrate

AlN · beige

Ultra-high thermal conductivity, far beyond alumina — built for IGBT, laser and high-power cooling.

Thermal k 170–230 W/m·KCTE 3.4 ×10⁻⁶/K

AlN · 结构件

FIG · 03

AlN Structural Parts

AlN structural · custom

Injection-molded precision parts with locating holes and notches; stable tolerance, batch consistency.

Process InjectionPrecision ±0.02 mm

Si₃N₄ 80

FIG · 04

Si₃N₄ Substrate

Silicon nitride · grey

Ultra-high strength and toughness — first choice for load-bearing, high-reliability EV power modules.

Flexural ≥800 MPaFracture K 6.5

FEATURED · AlN-230

SCALE 1:1 · 138×190 mm · t 0.38 mm

AlN-230

Aluminum Nitride Ceramic Substrate

Formed from high-purity aluminum nitride powder by tape casting and sintered at high temperature in a nitrogen atmosphere — beige finish, surface roughness 0.2–0.4 μm. 230 W/m·K bulk conductivity together with ≥10¹⁴ Ω·cm resistivity lets IGBT, SiC and GaN power devices carry higher current density in smaller packages. CTE 3.4 × 10⁻⁶/K is close to silicon.

THERMAL k

230W/m·K

DENSITY

≥3.33g/cm³

FLEX·σ

≥380MPa

U-BD

≥15kV/mm

DATASHEET

Full-range specs, openly published.

Key performance of all grades, compared side by side at a glance.

3 FAMILIES · 6 GRADES

AlNAluminum Nitride≥ 170 W/m·K

Spec		Unit	AlN-170	AlN-200	AlN-230
Basic
Appearance	—	—	米黄	米黄	米黄
Density	排水法	g/cm³	≥3.33	≥3.33	≥3.33
Surface roughness	Ra	μm	0.2 – 0.4	0.2 – 0.4	0.2 – 0.4
Warpage	—	%	≤0.2	≤0.2	≤0.2
Thermal
Thermal conductivity	25 ℃	W/m·K	≥170	≥200	≥230
CTE	25 – 800 ℃	10⁻⁶/K	3.4	3.4	3.4
Specific heat	25 ℃	J/(kg·K)	720	715	710
Mechanical
Flexural strength	三点抗弯	MPa	≥380	≥380	≥380
Vickers hardness	载荷 4.9N	GPa	11	11	11
Fracture toughness	压痕法	MPa·m½	3.0	2.7	2.4
Young's modulus	拉伸法	GPa	320	320	320
Electrical
Dielectric constant	1 MHz	—	8.5	8.5	8.5
Dielectric loss	1 MHz	10⁻⁴	≤2	≤2	≤2
Volume resistivity	25 ℃	Ω·cm	≥10¹⁴	≥10¹⁴	≥10¹⁴
Breakdown voltage	DC	kV/mm	≥15	≥15	≥15

Al₂O₃Alumina96 / 99 瓷

Spec		Unit	AL-96	AL-99
Basic
Appearance	—	—	白色	白色
Density	排水法	g/cm³	≥3.70	≥3.70
Surface roughness	Ra	μm	0.2 – 0.6	0.1 – 0.3
Warpage	—	%	≤0.3	≤0.3
Thermal
Thermal conductivity	25 ℃	W/m·K	≥20	29
CTE	25 – 800 ℃	10⁻⁶/K	7.8	7.8
Specific heat	25 ℃	J/(kg·K)	750	750
Mechanical
Flexural strength	三点抗弯	MPa	≥350	≥450
Vickers hardness	载荷 4.9N	GPa	14	14
Fracture toughness	压痕法	MPa·m½	3.0	3.0
Young's modulus	拉伸法	GPa	340	340
Electrical
Dielectric constant	1 MHz	—	9.4	9.7 – 10.5
Dielectric loss	1 MHz	10⁻⁴	≤3	< 1
Volume resistivity	25 ℃	Ω·cm	≥10¹⁴	≥10¹⁴
Breakdown voltage	DC	kV/mm	≥15	≥15

Si₃N₄Silicon Nitride80 W/m·K · 高韧

Spec		Unit	SN-80
Basic
Appearance	—	—	灰色
Density	排水法	g/cm³	≥3.23
Surface roughness	Ra	μm	0.3 – 0.4
Warpage	—	%	≤0.2
Thermal
Thermal conductivity	25 ℃	W/m·K	≥80
CTE	25 – 800 ℃	10⁻⁶/K	2.7
Specific heat	25 ℃	J/(kg·K)	710
Mechanical
Flexural strength	三点抗弯	MPa	≥800
Vickers hardness	载荷 4.9N	GPa	15
Fracture toughness	压痕法	MPa·m½	6.5
Young's modulus	拉伸法	GPa	310
Electrical
Dielectric constant	1 MHz	—	8
Dielectric loss	1 MHz	10⁻⁴	≤2
Volume resistivity	25 ℃	Ω·cm	≥10¹⁴
Breakdown voltage	DC	kV/mm	≥15

Typical values; refer to test reports. For full PDF datasheet, contact our engineers。

For real power,
not consumer gadgets.

08 SECTORS · 4 SERIES

01 / 08POWER

Power module

AlN-230 · Si₃N₄ · 650–1700 V

02 / 08AUTO

EV power electronics

AlN · Si₃N₄ · AEC-Q automotive

03 / 08ENERGY

PV · energy storage

96 Al₂O₃ · AlN · Inverter

04 / 08LIGHT

High-power LED

AlN · 99 Al₂O₃ · COB

05 / 08RF

Optical comms

AlN · thick-film IC

06 / 08IC

Thick-film IC

96 / 99 Al₂O₃ · thick film

07 / 08RAIL

Rail traction

AlN · Si₃N₄ · 6.5 kV

08 / 08AERO

Aerospace · RF

AlN · ZTA · MIL-STD

Four families,
thirteen grades.

Four material families,
covering the full power stack.

AlN-230

Full-range specs, openly published.

For real power,
not consumer gadgets.

Power module

EV power electronics

PV · energy storage

High-power LED

Optical comms

Thick-film IC

Rail traction

Aerospace · RF

Can't find the right grade?
Tell us your case — reply within 24h.

Four material families,covering the full power stack.

AlN-230

Full-range specs, openly published.

For real power,not consumer gadgets.

Power module

EV power electronics

PV · energy storage

High-power LED

Optical comms

Thick-film IC

Rail traction

Aerospace · RF

Can't find the right grade?Tell us your case — reply within 24h.

Four material families,
covering the full power stack.

For real power,
not consumer gadgets.

Can't find the right grade?
Tell us your case — reply within 24h.