SIDAO · Electronic Ceramic Substrates

Move chip heat,
out faster.

AlN-230 thermal k 230 W/(m·K) · Si₃N₄ flexural ≥800 MPa
Resistivity ≥10¹⁴ Ω·cm · Breakdown ≥17 kV/mm · Tape / dry-press / injection · Shipped from Suzhou
13
grades · 4 families
3 ways
tape / press / inject
Suzhou
own line · Suzhou
138.0 ± 0.05 mmCu · DBC190.0 ± 0.05 mmAAAlN-230 SUBSTRATEk = 230 W/m·K · t = 0.38 mmTape-cast · N₂-sinteredSECTION A-A · ×40CuAlNCuDWG NO.230-138190-ASCALENTSSHEET1 / 1
FIG · 01 AlN-230 SUBSTRATE TOP VIEW技术制图 · TECHNICAL DRAWING
SCROLL
§ 01 · MATERIAL

不是陶瓷外壳,是芯片的第一层散热路径

我们做的是流延法生产的电子陶瓷基板 —— 微观看是 5 μm 量级的氮化铝晶粒,宏观看是 138 × 190 mm、0.38 mm 厚的薄片。晶界、孔隙、粗糙度的每一点优化,最终决定芯片能跑多大电流。

SEM ×2000 · 材料微观结构示意图材料微观结构 · SEM
10 μm
AlN-230 · MICRO
SUZHOU · LAB-04

Three hard specs,
that tell if a substrate works.

§ 02 · CORE SPECS
01 / 03W/m·K
230W/m·K
体导热 · Thermal k
@ 25 ℃ · AlN-230
96 Al₂O₃≥20
Si₃N₄≥80
AlN-170≥170
AlN-230≥230
02 / 03MPa
800MPa
抗弯强度 · Flexural
3-point bend · Si₃N₄-80
96 Al₂O₃≥350
AlN≥380
99 Al₂O₃~420
Si₃N₄-80≥800
03 / 03Ω·cm
1014Ω·cm
体积电阻率 · Resistivity
@ 25 ℃ · all grades insulating
Aluminum10⁻⁶
Silicon (intrinsic)10⁵
Glass10¹²
Our ceramics≥10¹⁴
§ 03 · GET IN TOUCH

Tell us your case,
samples in 5 working days.

Send drawings or spec requirements — tape casting, dry pressing and injection run in parallel, covering odd shapes, thick walls, ultra-thin and volume. Small-batch delivery in 30 working days; engineers reply within 24 hours.

DIRECT LINE · 直拨
0512-67426963
Wu Jiliang · GM (Mobile 13372184077)
EMAILwujiliang@szsidao.com
WEBwww.sidaocera.com
ADDRESSNo. 56 Jinxiu Ave, Zhitang, Changshu, Jiangsu, China